Samsung today unveiled the world’s largest-capacity Vertical-NAND memory solutions amid growing demand for data-intensive applications across many industries using artificial intelligence and Internet of Things technologies. Samsung showcased 1-terabit V-NAND technology and an array of new solid state drives at the annual Flash Memory Summit held in California.
The Samsung 1Tb V-NAND chip is expected to be available next year. The chip will be capable of storing up to 70 high-definition two-hour movies (each 1.5 to 2 gigabits capacity). The arrival of a 1Tb V-NAND chip next year will enable 2TB of memory in a single V-NAND package by stacking 16 1Tb dies and will represent one of the most important memory advances of the past decade.
Samsung is sampling the industry’s first 16-terabyte (TB) NGSFF SSD, which will dramatically improve the memory storage capacity and IOPS (input/output operations per second) of today’s 1U rack servers. Measuring 30.5mm x 110mm x 4.38mm, the Samsung NGSFF SSD provides hyper-scale data center servers with substantially improved space utilization and scaling options. Utilizing the new NGSFF drive instead of M.2 drives in a 1U server can increase the storage capacity of the system by four times.
To highlight the advantages, Samsung demonstrated a reference server system that delivers 576TB in a 1U rack, using 36 16TB NGSFF SSDs. The 1U reference system can process about 10 million random read IOPS, which triples the IOPS performance of a 1U server equipped with 2.5-inch SSDs. A petabyte capacity can be achieved using only two of the 576TB systems.
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